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BM120 Pad Coated Fiberglass Thermal Silicone Pad for Heat Sink IGBT MOS Transistor

KSh 923
KSh 1,84750%

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+ shipping from KSh 134 to CBD - UON/Globe/Koja/River Road

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Product details

Hardness(shore A): 75+/-5
Dielectric Breakdown Voltage: 4.5KV
Thermal Conductivity: 1.0w/m.k
the can effectively reduce the thermal resistance between the electronic component and the radiator. It has good characteristic of electrical insulation, high dielectric strength, good thermal conductivity, high resistance chemical properties, in addition
It can withstand problem of short circuit of high voltage and metal piercing , and is an excellent thermal conductive insulation material to instead of the traditional mica and silicone grease.
Model Number: BM120
Shape: Flat Gasket
Standard or Nonstandard: Standard
1.Dielectric strength high
2.Good thermal conductivity
3.Good toughness, tear resistance
4.Surface soft, no viscosity on surface
5.High voltage insulation performance
6.Strong withstand voltage, wear resistance
7.Thin thickness, suitable for insulation and thermal power device.
Application:
1. , aviation ;
2. Large power source ;
3. Heating power device;
4. Automobile electronic heating module ;
5. Motor control, communication equipment;
6. Power semiconductor, IS MOS tube IGBT chip;
7. High voltage, high temperature, high power welding machine etc.
Sheet, die-cutting, roll, with adhesive and without adhesive are available
Property Parameter Table
colour:gray
Material:glass fiber
size:0.3mm*300mm*1m
Package Contents:
1*Thermal Silicone Pad
Only the above package content, other products are not included.
Note: Light shooting and different displays may cause the color of the item in the picture a little different from the real thing. The measurement allowed error is +/- 1-3cm.

Specifications

Key Features

Heat Sink

Specifications

  • SKU: GE840SN1FO2ONNAFAMZ
  • Weight (kg): 0.17

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BM120 Pad Coated Fiberglass Thermal Silicone Pad for Heat Sink IGBT MOS Transistor

BM120 Pad Coated Fiberglass Thermal Silicone Pad for Heat Sink IGBT MOS Transistor

KSh 923
KSh 1,84750%
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